Remesnik, V.G. : rechercher sur Z-Library

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1

Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis

Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Syvorotka, I.I., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Yakushev, M.V., Swiatek, Z., Morgiel,

Journal:

Infrared Physics & Technology

Année:

2019

Langue:

english

Fichier:

PDF, 1019 KB

english, 2019

2

Planar photodiodes based on p-HgCdTe (x = 0.22) epilayers grown by molecular beam epitaxy

V.N. Ovsyuk, V.G. Remesnik, S.A. Studenikin, A.O. Suslyakov, N.Kh. Talipov, V.V. Vasil'ev, T.I. Zahar'yash, Yu.G. Sidorov, S.A. Dvoretsky, N.N. Mikhaylov, V.G. Liberman, V.S. Varavin

Journal:

Infrared Physics & Technology

Année:

1996

Langue:

english

Fichier:

PDF, 195 KB

english, 1996

3

Method for the characterization of electron, light- and heavy-hole concentrations and mobilities in narrow-gap p-type HgCdTe

N.K. Talipov, V.N. Ovsyuk, V.G. Remesnik, V.V. Schaschkin

Journal:

Materials Science and Engineering: B

Année:

1997

Langue:

english

Fichier:

PDF, 422 KB

english, 1997

4

320×256 photodetector arrays with a built-in short-wavelength cutoff filter

Vasil'ev, V. V., Varavin, V. S., Dvoretsiĭ, S. A., Marchishin, I. V., Mikhaĭlov, N. N., Predein, A. V., Remesnik, V. G., Sabinina, I. V., Sidorov, Yu. G., Suslyakov, A. O.

Journal:

Journal of Optical Technology

Année:

2009

Langue:

english

Fichier:

PDF, 131 KB

english, 2009

5

Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Voitsekhovskii, A V, Izhnin, I I, Syvorotka, I I, Korotaev, A G, Mynbaev, K D, Varavin, V S, Dvoretsky, S A, Marin, D V, Mikhailov, N N, Remesnik, V G, Yakushev, M V

Journal:

Journal of Physics Conference Series

Année:

2018

Fichier:

PDF, 5.99 MB

2018

6

Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films

Voitsekhovskii, A V, Izhnin, I I, Syvorotka, I I, Korotaev, A G, Mynbaev, K D, Varavin, V S, Dvoretsky, S A, Marin, D V, Mikhailov, N N, Remesnik, V G, Yakushev, M V

Journal:

Journal of Physics Conference Series

Année:

2018

Langue:

english

Fichier:

PDF, 5.99 MB

english, 2018

7

Photodiodes based on p-on-n junctions formed in MBE-grown n-type MCT absorber layers for the spectral region 8 to 11 μm

Varavin, V.S., Sabinina, I.V., Sidorov, G.Yu., Marin, D.V., Remesnik, V.G., Predein, A.V., Dvoretsky, S.A., Vasilyev, V.V., Sidorov, Yu.G., Yakushev, M.V., Latyshev, A.V.

Journal:

Infrared Physics & Technology

Année:

2020

Fichier:

PDF, 655 KB

2020

8

The growth of high-quality MCT films by MBE using in-situ ellipsometry

Prof. K. K. Svitashev, Dr. S. A. Dvoretsky, Dr. Yu. G. Sidorov, Dr. V. A. Shvets, Dr. A. S. Mardezhov, I. E. Nis, V. S. Varavin, V. Liberman, Dr. V. G. Remesnik

Journal:

Crystal Research and Technology

Année:

1994

Langue:

english

Fichier:

PDF, 371 KB

english, 1994

9

Structural and optical properties of noncentrosymmetric quaternary crystal AgCd2GaS4

V.V. Atuchin, V.Z. Pankevich, O.V. Parasyuk, N.V. Pervukhina, L.D. Pokrovsky, V.G. Remesnik, V.N. Uvarov, V.I. Pekhnyo

Journal:

Journal of Crystal Growth

Année:

2006

Langue:

english

Fichier:

PDF, 525 KB

english, 2006

10

Electrical activation of boron implanted in p-HgCdTe (x = 0.22) by low-temperature annealing under an anodic oxide

N.Kh. Talipov, V.N. Ovsyuk, V.G. Remesnik, V.V. Vasilyev

Journal:

Materials Science and Engineering: B

Année:

1997

Langue:

english

Fichier:

PDF, 383 KB

english, 1997

11

Effect of post-implantation anneal on the current-voltage characteristics of IR photodiodes based on p-CdxHg1-xTe

A. V. Vishnyakov, V. S. Varavin, M. O. Garifullin, A. V. Predein, V. G. Remesnik, I. V. Sabinina, G. Yu. Sidorov

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 135 KB

english, 2010

12

Optical properties of molecular beam epitaxy-grown HgCdTe structures with potential wells

V. I. Ivanov-Omskii, K. D. Mynbaev, N. L. Bazhenov, V. A. Smirnov, N. N. Mikhailov, G. Yu. Sidorov, V. G. Remesnik, V. S. Varavin, S. A. Dvoretsky

Journal:

physica status solidi (c)

Année:

2010

Langue:

english

Fichier:

PDF, 150 KB

english, 2010

13

Photoluminescence of Hg1 −xCdxTe based heterostructures grown by molecular-beam epitaxy

K. D. Mynbaev, N. L. Bazhenov, V. I. Ivanov-Omskii, N. N. Mikhailov, M. V. Yakushev, A. V. Sorochkin, V. G. Remesnik, S. A. Dvoretsky, V. S. Varavin, Yu. G. Sidorov

Journal:

Année:

2011

Langue:

english

Fichier:

PDF, 227 KB

english, 2011

14

320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter

V.V. Vasilyev, V.S. Varavin, S.A. Dvoretsky, I.V. Marchishin, N.N. Mikhailov, A.V. Predein, V.G. Remesnik, I.V. Sabinina, Yu.G. Sidorov, A.O. Susliakov

Journal:

Opto-Electronics Review

Année:

2010

Langue:

english

Fichier:

PDF, 578 KB

english, 2010

15

A focal plane array detector based on a variband isotypeP-pjunction in MCT layers grown by molecular beam epitaxy

V. V. Vasilyev, S. A. Dvoretsky, V. S. Varavin, N. N. Mikhailov, V. G. Remesnik, Yu. G. Sidorov, A. O. Suslyakov, A. L. Aseev

Journal:

Optoelectronics, Instrumentation and Data Processing

Année:

2007

Langue:

english

Fichier:

PDF, 176 KB

english, 2007

16

Effect of post-implantation annealing on the current-voltage characteristics of IR photodiodes based onp-HgCdTe

A. V. Vishnyakov, V. S. Varavin, M. O. Garifullin, A. V. Predein, V. G. Remesnik, I. V. Sabinina, G. Yu. Sidorov

Journal:

Optoelectronics, Instrumentation and Data Processing

Année:

2009

Langue:

english

Fichier:

PDF, 247 KB

english, 2009

17

High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy

Mynbaev, K. D., Bazhenov, N. L., Shilyaev, A. V., Dvoretskii, S. A., Mikhailov, N. N., Yakushev, M. V., Remesnik, V. G., Varavin, V. S.

Journal:

Technical Physics

Année:

2013

Langue:

english

Fichier:

PDF, 177 KB

english, 2013

18

SPIE Proceedings [SPIE Khabaovsk, Russia - Khabrovsk (Friday 10 September 2004)] Fundamental Problems of Optoelectronics and Microelectronics II - Growth and acoustical properties of B-BaB2O4 crystals

Atuchin, V. V., Remesnik, V. G., Tsvetkov, E. G., Zubrinov, I. I., Kulchin, Yuri N., Vitrik, Oleg B., Stroganov, Vladimir I.

Année:

2005

Langue:

english

Fichier:

PDF, 313 KB

english, 2005

19

HgCdTe structures for dual-band photodetectors operating in the 3–5 and 8–12µm spectral ranges

Varavin, V. S., Dvoretskii, S. A., Ikusov, D. G., Mikhailov, N. N., Remesnik, V. G., Sidorov, G. Yu., Sidorov, Yu. G., Sizikov, P. N., Uzhakov, I. N.

Journal:

Optoelectronics, Instrumentation and Data Processing

Année:

2013

Langue:

english

Fichier:

PDF, 563 KB

english, 2013

20

CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range

Yakushev, M. V., Varavin, V. S., Remesnik, V. G., Marin, D. V.

Journal:

Année:

2014

Langue:

english

Fichier:

PDF, 323 KB

english, 2014

21

A laboratory-based hard x-ray monochromator for high-resolution x-ray emission spectroscopy and x-ray absorption near edge structure measurements

Seidler, G. T., Mortensen, D. R., Remesnik, A. J., Pacold, J. I., Ball, N. A., Barry, N., Styczinski, M., Hoidn, O. R.

Journal:

Review of Scientific Instruments

Année:

2014

Langue:

english

Fichier:

PDF, 1.24 MB

english, 2014

22

Total Conductance of MIS Structures Based on Graded-Gapp-Hg1–хCdхTe (x=0.22–0.23) Grown by Molecular Beam Epitaxy

Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. М., Vasil’ev, V. V., Varavin, V. S., Dvoretskii, S. A., Мikhailov, N. N., Kuz’min, V. D., Remesnik, V. G.

Journal:

Russian Physics Journal

Année:

2014

Langue:

english

Fichier:

PDF, 432 KB

english, 2014

23

Special Features of Admittance in Mis Structures Based on Graded-Gap MBEn-Hg1–xCdxTe (x= 0.31–0.32) in a Temperature Range OF 8–300 K

Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. М., Vasil’ev, V. V., Varavin, V. S., Dvoretskii, S. A., Мikhailov, N. N., Kuz’min, V. D., Remesnik, V. G.

Journal:

Russian Physics Journal

Année:

2014

Langue:

english

Fichier:

PDF, 330 KB

english, 2014

24

SPIE Proceedings [SPIE Photonics Europe - Strasbourg, France (Monday 3 April 2006)] Optical Sensing II - MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAs

Vasiliev, V. V., Remesnik, V. G., Dvoretsky, S. A., Varavin, V. S., Mikhailov, N. N., Sidorov, Yu. G., Suslyakov, A. O., Aseev, A. L., Culshaw, Brian, Mignani, Anna G., Bartelt, Hartmut, Jaroszewicz,

Année:

2006

Langue:

english

Fichier:

PDF, 324 KB

english, 2006

25

Possibility of formation of optical waveguides by laser and electron beam bombardment of thin glassy chalcogenide semiconductor films

Remesnik, V G, Fateev, V A, Tsukerman, V G

Journal:

Soviet Journal of Quantum Electronics

Année:

1977

Langue:

english

Fichier:

PDF, 317 KB

english, 1977

26

Reversible pulsed recording of optical information in some glassy films

Karakulova, T S, Nalivaiko, V I, Remesnik, V G, Tsukerman, V G

Journal:

Soviet Journal of Quantum Electronics

Année:

1974

Langue:

english

Fichier:

PDF, 235 KB

english, 1974

27

High-efficiency phase hologram recording in chalcogenide films at elevated temperatures

Karnatovskiĭ, V E, Remesnik, V G, Tsukerman, V G

Journal:

Soviet Journal of Quantum Electronics

Année:

1980

Langue:

english

Fichier:

PDF, 578 KB

english, 1980

28

The Growth Of High-Quality MCT Films by MBE Using in Situ Ellipsometry

Svitashev, K.K., Dvorwetsky, S.A., Shvets, V.A., Mardezhov, A.S., Sidoroy, YU.G., Nis, I.E., Varavin, V.S., Liberman, V., Remesnik, V. G.

Journal:

MRS Proceedings

Année:

1994

Langue:

english

Fichier:

PDF, 385 KB

english, 1994

29

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties

Yakushev, M. V., Babenko, A. A., Varavin, V. S., Vasil'ev, V. V., Mironova, L. V., Pridachin, D. N., Remesnik, V. G., Sabrinina, I. V., Sidorov, Yu. G., Suslyakov, A. O., Filachev, Anatoly M., Ponomar

Année:

2012

Langue:

english

Fichier:

PDF, 906 KB

english, 2012

30

SPIE Proceedings [SPIE Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics - Kiev, Ukraine (Wednesday 22 May 2002)] Sixth International Conference on Material Science and Material Properties for Infrared Optoelectronics - Status of molecular beam epitaxy of CdxHg1-xTe

Antsiferov, A. P., Burdina, L. D., Varavin, Vasily S., Gutakovsky, A. K., Dvoretsky, Sergey A., Kartashev, V. A., Mikhailov, Nikolay N., Pridachin, D. N., Remesnik, V. G., Rykhlitskii, S. V., Sabinina

Année:

2003

Langue:

english

Fichier:

PDF, 417 KB

english, 2003

31

Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy

Shvets, V. A., Azarov, I. A., Spesivtsev, E. V., Rykhlitskii, S. V., Yakushev, M. V., Marin, D. V., Mikhailov, N. N., Kuzmin, V. D., Remesnik, V. G., Dvoretsky, S. A.

Journal:

Instruments and Experimental Techniques

Année:

2016

Langue:

english

Fichier:

PDF, 849 KB

english, 2016

32

A Modern Laboratory XAFS Cookbook

Seidler, GT, Mortensen, DR, Ditter, AS, Ball, NA, Remesnik, AJ

Journal:

Journal of Physics Conference Series

Année:

2016

Langue:

english

Fichier:

PDF, 1.52 MB

english, 2016

33

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 – xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method

Evstigneev, V. S., Varavin, V. S., Chilyasov, A. V., Remesnik, V. G., Moiseev, A. N., Stepanov, B. S.

Journal:

Année:

2018

Langue:

english

Fichier:

PDF, 419 KB

english, 2018

34

A Megapixel Matrix Photodetector of the Middle Infrared Range

Bazovkin, V. M., Varavin, V. S., Vasil’ev, V. V., Glukhov, A. V., Gorshkov, D. V., Dvoretsky, S. A., Kovchavtsev, A. P., Makarov, Yu. S., Marin, D. V., Mzhelsky, I. V., Polovinkin, V. G., Remesnik, V.

Journal:

Journal of Communications Technology and Electronics

Année:

2019

Langue:

english

Fichier:

PDF, 613 KB

english, 2019

35

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Sidorov, Yu.G., Shvets, V.A., Ikusov, D.G., Varavin, V.S., Yakushev, M.V., Gumenjuk-Sichevska, J.V., Golenkov, A.G., Lysiuk, I.O., Tsybrii, Z.F., Shev

Journal:

Opto-Electronics Review

Année:

2019

Langue:

english

Fichier:

PDF, 3.15 MB

english, 2019

36

Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns

Zverev, A. V., Suslyakov, A. O., Sabinina, I. V., Sidorov, G. Yu., Yakushev, M. V., Kuzmin, V. D., Varavin, V. S., Remesnik, V. G., Makarov, Yu. S., Predein, A. V., Gorshkov, D. V., Dvoretsky, S. A.,

Journal:

Journal of Communications Technology and Electronics

Année:

2019

Langue:

english

Fichier:

PDF, 1.01 MB

english, 2019

37

MBE-grown MCT hetero- and nanostructures for IR and THz detectors

Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Sidorov, Yu.G., Shvets, V.A., Ikusov, D.G., Varavin, V.S., Yakushev, M.V., Gumenjuk-Sichevska, J.V., Golenkov, A.G., Lysiuk, I.O., Tsybrii, Z.F., Shev

Journal:

Opto-Electronics Review

Année:

2019

Fichier:

PDF, 3.15 MB

2019

38

Strong Disorder in HgCdTe Studied with Optical Methods and X-Ray Diffraction

Andryushchenko, D A, Trapeznikova, I N, Bazhenov, N L, Yagovkina, M A, Mynbaev, K D, Remesnik, V G, Varavin, V S

Journal:

Journal of Physics Conference Series

Année:

2019

Fichier:

PDF, 702 KB

2019

39

[IEEE 2019 International Vacuum Electronics Conference (IVEC) - Busan, Korea (South) (2019.4.28-2019.5.1)] 2019 International Vacuum Electronics Conference (IVEC) - Notice of Removal: Porous silicon carbide cold electron sources

Sharifi, Fred, Cannara, Rachel, Remesnik, Adam, Bechtel, Lily, Barkley, Sarice, Jones, Benjamin

Année:

2019

Fichier:

PDF, 13.77 MB

2019

40

Optical studies of wide-bandgap HgCdTe material used in potential-and quantum-well structures

Andryushchenko, D A, Bazhenov, N L, Mynbaev, K D, Mikhailov, N N, Remesnik, V G

Journal:

Journal of Physics Conference Series

Année:

2020

Langue:

english

Fichier:

PDF, 924 KB

english, 2020

41

HgCdTe-Based 640 Ã 512 Matrix Midwave Infrared Photodetector

Marchishin, I. V., Sabinina, I. V., Sidorov, G. Yu., Yakushev, M. V., Varavin, V. S., Remesnik, V. G., Predein, A. V., Dvoretsky, S. A., Vasilâev, V. V., Sidorov, Yu. G., Marin, D. V., Kovchavtsev,

Journal:

Journal of Communications Technology and Electronics

Année:

2020

Fichier:

PDF, 863 KB

2020

42

Optical Studies of Molecular-Beam Epitaxy-Grown Hg1âxCdxTe with xâ=â0.7â0.8

Mynbaev, K. D., Smirnov, A. M., Bazhenov, N. L., Mikhailov, N. N., Remesnik, V. G., Yakushev, M. V.

Journal:

Journal of Electronic Materials

Année:

2020

Fichier:

PDF, 1.08 MB

2020

43

Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE

Izhnin, I. I., Fitsych, O. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Kurbanov, K. R., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Remesnik, V. G., Yakushev, M. V., Bonchyk,

Journal:

Russian Physics Journal

Année:

2020

Fichier:

PDF, 654 KB

2020